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Goford Semiconductor G4616

Goford Semiconductor G4616

MPNG4616
Active

MOSFET N/P-CH 40V 8A/7A 8SOP

$0.57Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

G4616 specifications
ParameterValue
FET typeN and P-Channel Complementary
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C8A (Tc), 7A (Tc)
Power - max2W (Tc), 2.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs12nC @ 10V, 13nC @ 10V
Input capacitance (Ciss) (Max) @ vds415pF @ 20V, 520pF @ 20V