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GeneSiC Semiconductor GB02SLT12-214

GeneSiC Semiconductor GB02SLT12-214

MPNGB02SLT12-214
Active

DIODE SIL CARB 1.2KV 2A DO214AA

$3.2Ref. price · indicative, final on quote
PackagingDO-214AA, SMB
RoHSRoHS Compliant
SeriesSiC Schottky MPS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GB02SLT12-214 specifications
ParameterValue
SeriesSiC Schottky MPS™
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if1.8 V @ 1 A
Current - reverse leakage @ vr50 µA @ 1200 V
Current - average rectified2A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AA, SMB
Capacitance @ vr,131pF @ 1V, 1MHz
Reverse recovery time0 ns