GD2X30MPS12D
GeneSiC Semiconductor · SiC Schottky MPS™ Series
DIODE SCHOTTKY 1200V 2X30A TO-24
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SiC Schottky MPS™ |
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 30 A |
| Current - reverse leakage @ vr | 20 µA @ 1200 V |
| Current - average rectified (Io) (per diode) | 55A (DC) |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-247-3 |
| Diode configuration | 1 Pair Common Cathode |
GD2X30MPS12D
[ALLOC] verified