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Diodes Incorporated 1N4448HLP-7 — Discrete Semiconductors

1N4448HLP-7 GP Diode 80V 125mA 0402 DFN | ICBOMS

MPN1N4448HLP-7
Active

DIODE GEN PURP 80V 125MA 2DFN

$0.3700Ref. price · indicative, final on quote
Packaging0402 (1006 Metric)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N4448HLP-7 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if1 V @ 100 mA
Current - reverse leakage @ vr100 nA @ 80 V
Current - average rectified125mA
Operating temperature - junction-65°C ~ 150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
Case0402 (1006 Metric)
Capacitance @ vr,3pF @ 0.5V, 1MHz
Reverse recovery time4 ns