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Winbond Electronics W25N512GWYIR TR — Memory (DRAM / SRAM / Flash / EEPROM)

Winbond Electronics W25N512GWYIR TR

MPNW25N512GWYIR TR
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Winbond Electronics W25N512GWYIR TR datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

W25N512GWYIR TR specifications
ParameterValue
SeriesSpiFlash®
Memory typeNon-Volatile
MountingSurface Mount
Voltage1.7V ~ 1.95V
Frequency104 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologyFLASH - NAND (SLC)
Access time7 ns
Memory size512Mbit
Memory formatFLASH
Case48-UFBGA, WLCSP
Memory organization64M x 8
Write cycle time - word, page700µs