Vishay Siliconix SI4776DY-T1-GE3
MPNSI4776DY-T1-GE3
Obsolete
$0.3706Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SkyFET®, TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 11.9A (Tc) |
| Power dissipation | 4.1W (Tc) |
| Operating temperature | -55°C~150°C(TA) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.3V @ 1mA |
| Rds on (Max) @ id, vgs | 16mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 521 pF @ 15 V |