Vishay Siliconix SI4447DY-T1-E3
MPNSI4447DY-T1-E3
Active
MOSFET P-CH 40V 3.3A 8SO
$0.8400Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 15V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.3A (Ta) |
| Power dissipation | 1.1W (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 72mOhm @ 4.5A, 15V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 805 pF @ 20 V |