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Vishay Siliconix SI4346DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4346DY-T1-GE3

MPNSI4346DY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4346DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C5.9A (Ta)
Power dissipation1.31W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V