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Vishay Siliconix SI4108DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4108DY-T1-GE3

MPNSI4108DY-T1-GE3
Obsolete
$1.9900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4108DY-T1-GE3 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Current - continuous drain (Id) @ 25°C20.5A (Tc)
PackageCut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9.8mOhm @ 13.8A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 38 V