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Vishay General Semiconductor - Diodes Division BYW82-TAP — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYW82-TAP

MPNBYW82-TAP
Active
$0.5148Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYW82-TAP specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1 V @ 3 A
Current - reverse leakage @ vr1 µA @ 200 V
Current - average rectified3A
Operating temperature - junction-55°C ~ 175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Box (TB)
TechnologyAvalanche
CaseSOD-64, Axial
Capacitance @ vr,60pF @ 4V, 1MHz
Reverse recovery time7.5 µs