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Vishay General Semiconductor - Diodes Division BYW8 Series

10 variants · Vishay General Semiconductor - Diodes Division

About the Vishay General Semiconductor - Diodes Division BYW8 Series

The Vishay General Semiconductor - Diodes Division BYW8 Series series groups 10 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common capacitance @ vr, of 60pF @ 4V, 1MHz, case of SOD-64, Axial and current - average rectified of 3A. Variants differ by current - reverse leakage @ vr and package, so you can match the exact current - reverse leakage @ vr your application requires using the selection guide below.

Select a variant by

Current - reverse leakage @ vr
1 µA @ 800 V · 1 µA @ 1000 V
Package
Cut Tape (CT); Tape & Box (TB) · Tape & Reel (TR); Cut Tape (CT)

Shared specifications

Capacitance @ vr,
60pF @ 4V, 1MHz
Case
SOD-64, Axial
Current - average rectified
3A
Diode type
Avalanche
Mounting
Through Hole
Operating temperature - junction
-55°C~175°C
Reverse recovery time
7.5 µs
Speed
Standard Recovery >500ns, > 200mA (Io)
Voltage - DC reverse (Vr)
1000 V
Voltage - forward (Vf) (Max) @ if
1 V @ 3 A

Variant comparison

ParameterBYW86TAPBYW86-TR
Current - reverse leakage @ vr1 µA @ 800 V1 µA @ 1000 V
PackageCut Tape (CT); Tape & Box (TB)Tape & Reel (TR); Cut Tape (CT)

Request a quote on any Vishay General Semiconductor - Diodes Division BYW8 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants