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Vishay General Semiconductor - Diodes Division BYV12-TR — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV12-TR

MPNBYV12-TR
Active
$0.2574Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV12-TR specifications
ParameterValue
Diode typeAvalanche
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 1 A
Current - reverse leakage @ vr5 µA @ 100 V
Current - average rectified1.5A
Operating temperature - junction-55°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseSOD-57, Axial
Reverse recovery time300 ns