Vishay General Semiconductor - Diodes Division BYV1 Series

10 variants · Vishay General Semiconductor - Diodes DivisionAll Discrete Semiconductors →

About the Vishay General Semiconductor - Diodes Division BYV1 Series

The Vishay General Semiconductor - Diodes Division BYV1 Series series groups 10 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common capacitance @ vr, of -, case of SOD-57, Axial and current - average rectified of 1.5A. Variants differ by current - reverse leakage @ vr, operating temperature - junction and voltage - DC reverse (Vr), so you can match the exact current - reverse leakage @ vr your application requires using the selection guide below.

Select a variant by

Current - reverse leakage @ vr: 5 µA @ 100 V · 5 µA @ 400 V · 5 µA @ 1000 V
Operating temperature - junction: -55°C ~ 175°C · -55°C~175°C
Voltage - DC reverse (Vr): 100 V · 400 V · 1000 V

Shared specifications

Capacitance @ vr,: -
Case: SOD-57, Axial
Current - average rectified: 1.5A
Mounting: Through Hole
Package: Tape & Reel (TR)
Reverse recovery time: 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - forward (Vf) (Max) @ if: 1.5 V @ 1 A

Variant comparison

Parameter	BYV12-TR	BYV13-TR	BYV16-TR
Current - reverse leakage @ vr	5 µA @ 100 V	5 µA @ 400 V	5 µA @ 1000 V
Operating temperature - junction	-55°C~175°C	-55°C ~ 175°C	-55°C~175°C
Voltage - DC reverse (Vr)	100 V	400 V	1000 V

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