Transphorm TP65H300G4LSG-TR
MPNTP65H300G4LSG-TR
Active
GANFET N-CH 650V 6.5A 3PQFN
$4.33692Price · pay online now
$4.34 / ea
1 in stock — maximum per order · 3–4 days lead time
Packaging3-PowerDFN
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 8V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Tc) |
| Power dissipation | 21W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube; Cut Tape (CT) |
| Vgs | ±18V |
| Technology | GaNFET (Gallium Nitride) |
| Case | 3-PowerDFN |
| Vgs(th) (Max) @ id | 2.6V @ 500µA |
| Rds on (Max) @ id, vgs | 312mOhm @ 5A, 8V |
| Gate charge (Qg) (Max) @ vgs | 9.6 nC @ 8 V |
| Input capacitance (Ciss) (Max) @ vds | 760 pF @ 400 V |