650 V 25 A GAN FET
$12.82Ref. price · indicative, final on quote
Packaging3-PowerDFN
StockContact for availability
MOQ1 pcs
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
- Date & lot codes on quoteStated per line before you commit; label photos on request.
- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
- PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.
Specifications
| Parameter | Value |
|---|---|
| Series | TP65H070L |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 96W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| Case | 3-PowerDFN |
| Vgs(th) (Max) @ id | 4.8V @ 700µA |
| Rds on (Max) @ id, vgs | 85mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 600 pF @ 400 V |