Transphorm TP65H150G4PS
MPNTP65H150G4PS
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GAN FET N-CH 650V TO-220
$6.00600Price · pay online now
PackagingTO-220-3
SeriesSuperGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SuperGaN® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.8V @ 500µA |
| Rds on (Max) @ id, vgs | 180mOhm @ 8.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 598 pF @ 400 V |