Transphorm TP65H480G4JSG-TR
MPNTP65H480G4JSG-TR
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GANFET N-CH 650V 3.6A 3PQFN
$3.98Ref. price · indicative, final on quote
Packaging3-SMD, Flat Lead
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 8V |
| Current - continuous drain (Id) @ 25°C | 3.6A (Tc) |
| Power dissipation | 13.2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±18V |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Case | 3-SMD, Flat Lead |
| Vgs(th) (Max) @ id | 2.8V @ 500µA |
| Rds on (Max) @ id, vgs | 560mOhm @ 3.4A, 8V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 8 V |
| Input capacitance (Ciss) (Max) @ vds | 760 pF @ 400 V |