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TP65H050G4WS - Transphorm
MPN TP65H050G4WS
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
650 V 34 A GAN FET
In Stock: 10 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$16.39 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$16.39
10+ pcs
$15.89
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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-247-3
Output / Current 650 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SuperGaN® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 34A (Tc) |
| Power dissipation | 119W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.8V @ 700µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1000 pF @ 400 V |
Series Sibling Variants
Transphorm SuperGaN® Series Models
Sibling variants, package options, and speed/density grades in this Transphorm semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
TP65H050G4WS
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