Transphorm TP65H050G4WS
MPNTP65H050G4WS
Active
650 V 34 A GAN FET
$14.93Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesSuperGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SuperGaN® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 34A (Tc) |
| Power dissipation | 119W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | GaNFET (Gallium Nitride) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.8V @ 700µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1000 pF @ 400 V |