80 V, 3 A PNP — the load-switch envelope
The TTA003,L1NQ(O is a PNP epitaxial planar transistor rated for 80 V collector-emitter breakdown and 3 A continuous collector current, dissipating up to 10 W in the TO-252-3 (DPak) surface-mount package. That 80 V ceiling covers most 48 V and 60 V bus rails with derating; the 3 A Ic handles moderate solenoid, relay, or small-motor loads in a single device.
Conduction loss and switching speed
Vce(sat) is 500 mV maximum at 100 mA base, 1 A collector — at the 3 A rated current the saturation voltage will be higher, so the 10 W Pd budget must account for the I*Vce(sat) product at the actual operating point. The 100 MHz transition frequency (fT) supports linear amplification up to several MHz and PWM switching into inductive loads at tens of kHz, though the storage time in saturation limits hard-switching efficiency above 100 kHz. Collector cutoff current is 100 nA maximum (ICBO) — low enough that leakage does not affect bias in high-impedance base-drive circuits at room temperature, but doubles roughly every 10 °C rise, so at 125 °C junction expect microamp-level leakage that may shift the off-state bias in a Darlington or cascode configuration.
Surface-mount power footprint
The 10 W Pd is achievable only with adequate board-level heatsinking; in free air without a pad, derate to roughly 2-3 W depending on ambient.
Listed as Active with no NRND or EOL flag — Toshiba continues to manufacture this part. RoHS compliant, so it clears EU and similar regulatory markets without exemption paperwork. The junction temperature rating of 150 °C (TJ) means the device can operate in warm environments — inside a sealed power supply or near a heatsink — provided the thermal resistance from junction to ambient is managed via the PCB copper.