Dual pre-biased transistor for automotive switching
The Toshiba RN4907FE,LXHF(CT packs one NPN and one PNP pre-biased transistor into a single SOT-563 package, with integrated 10kΩ base resistors (R1) and 47kΩ emitter-base resistors (R2). Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, it is designed for automotive-grade switching loads up to 100 mW total power dissipation. AEC-Q101 qualification means this part is screened for automotive reliability — under-hood or cabin-module environments, with controlled lot traceability and extended temperature performance.
Bias resistors save board space
The 10kΩ base resistor and 47kΩ emitter-base resistor eliminate two external passives per transistor channel. For a complementary pair that is four resistors you do not place or inspect — a real BOM-density win on a cramped ECU or sensor PCB. With a minimum DC current gain of 80 at 10 mA collector current and 5 V VCE, the integrated bias network drives 5 mA loads with a typical VCE(sat) of 300 mV at 250 µA base current — clean saturation for logic-level switching.
100 mA collector current — where it fits
The 100 mA maximum continuous collector current suits low-to-medium current switching: relay coils, LED arrays, small solenoids, or as a gate-drive buffer for a power MOSFET. The 500 nA maximum collector cut-off current keeps off-state leakage negligible in battery- or ignition-powered circuits. Transition frequency of 200 MHz (NPN) and 250 MHz (PNP) is fast enough for PWM switching up to several megahertz — no speed bottleneck in a typical automotive load-switch or signal-level translator application.
Package and sourcing reality
It is specified for surface-mount assembly in the SOT-563 or SOT-666 footprint (supplier device package ES6).