The RN4986(T5L,F,T): The pre-biased topology eliminates two external resistors per transistor — saving four resistors and the associated pick-and-place cost per board. Collector current is rated 100 mA max per transistor, with a collector-emitter breakdown of 50 V. The 200 mW total power dissipation limits continuous current at higher voltages — at 50 V the practical Ic is well below 4 mA continuous; at 5 V it can run closer to 40 mA. The 300 mV Vce saturation at 250 µA base drive keeps conduction losses low in saturated switching. The minimum hFE of 80 at 10 mA, 5 V ensures consistent gain across the operating range.
RoHS compliance and documentation
The RN4986(T5L,F,T) is RoHS compliant per Toshiba's declaration — no lead, mercury, cadmium, or other restricted substances above the threshold.