Dual complementary pre-biased transistor in SOT-563
The Toshiba RN4983FE,LF(CT integrates one NPN and one PNP pre-biased transistor in a single SOT-563 package, each with 22 kOhm series base and base-emitter resistors built in. This eliminates two external resistor pairs per channel, shrinking the footprint for level translation, driver, or inverter stages on dense PCBs. Each transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a total package dissipation of 100 mW. The 250 MHz transition frequency supports switching up to low-MHz range in logic-level interface or relay driver circuits.
Active lifecycle and RoHS3 compliance
The supplier device package is designated ES6.
Bias resistor network and saturation performance
Both R1 (base resistor) and R2 (base-emitter resistor) are 22 kOhms, giving a fixed input threshold that turns the transistor fully on at standard logic levels without external biasing. Collector cutoff current is 100 nA maximum, which keeps off-state leakage below the threshold for high-impedance inputs.