Dual pre-biased transistor in SOT-363
The Toshiba RN4908,LF(CT integrates one NPN and one PNP pre-biased transistor in a single 6-pin SOT-363 package, saving board space compared to two discrete bias-resistor transistors. Each transistor includes built-in bias resistors: 22 kΩ base resistor (R1) and 47 kΩ base-emitter resistor (R2), eliminating external resistor components for the switching circuit. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a power dissipation ceiling of 200 mW that sets the thermal budget for the SOT-363 footprint.
Switching performance and saturation
Transition frequency reaches 200 MHz for the NPN side and 250 MHz for the PNP side, supporting switching applications up to the low-MHz range. Vce saturation is 300 mV maximum at 250 µA base current and 5 mA collector current, giving a low on-state voltage drop for logic-level loads.
Fully ROHS3 compliant, with no restricted substances above the threshold limits.
