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Toshiba Semiconductor RN4901FE,LXHF(CT — Discrete Semiconductors

Toshiba RN4901FE,LXHF(CT Dual Pre-Biased Transistor

MPNRN4901FE,LXHF(CT
End of Life

Toshiba Semiconductor Automotive AEC-Q101 dual pre-biased transistor, RN4901FE,LXHF(CT, 1 NPN + 1 PNP, 4.7kΩ base and emitter resistors, 100mA Ic, 50V Vce, SOT-563/ES6 package, Tape & Reel or Cut Tape.

$0.37Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockIn Stock (21)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RN4901FE,LXHF(CT Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 10mA, 5V
Power - max100mW
Frequency200MHz, 250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)4.7kOhms
Resistor - emitter base (R2)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

What the AEC-Q101 rating means for the board

The RN4901FE,LXHF(CT carries AEC-Q101 qualification, which means it has passed the automotive-grade stress tests: high-temperature reverse bias, temperature cycling, and ESD robustness per the AEC component technical committee. For a design targeting under-hood or cabin electronics, this certification removes the need for a separate PPAP submission on the transistor alone. Housed in a SOT-563 package (also listed as supplier device package ES6), the dual transistor occupies roughly the same PCB area as two single SOT-23s but routes the bias resistors internally.

Parametric fit for a 5 V logic interface

The 300 mV saturation voltage at 250 µA base current and 5 mA collector current means the output drops less than 0.3 V when fully on — the downstream load still sees a valid logic high. Transition frequency is 200 MHz for the NPN and 250 MHz for the PNP side, well above the switching speeds needed for a 1 MHz PWM gate drive or a CAN transceiver enable line. The 500 nA maximum collector cutoff current keeps leakage negligible in a battery-powered module that sleeps between ignition cycles.

Frequently asked questions

What compliance documentation does Toshiba provide for the RN4901FE,LXHF(CT?

As an AEC-Q101 qualified part, Toshiba provides a PPAP (Production Part Approval Process) package and a PCN (Product Change Notification) history. The part is RoHS-compliant and REACH-compliant per Toshiba's standard automotive-grade declaration. No UL or IEC certification is listed for this discrete transistor.