RN2911FE~1TE85L~6F~2
Toshiba Semiconductor RN2911FE(TE85L,F)
MPNRN2911FE(TE85L,F)
End of Life
TRANS 2PNP PREBIAS 0.1W ES6
$0.36Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | 2 PNP - Pre-Biased (Dual) |
| Voltage - collector emitter breakdown | 50V |
| Current - collector (Ic) | 100mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 120 @ 1mA, 5V |
| Power - max | 100mW |
| Frequency - transition | 200MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SOT-563, SOT-666 |
| Resistor - base (R1) | 10kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA |