Toshiba Semiconductor RN29 Memory Series

6 variants · Toshiba SemiconductorAll Memory (DRAM / SRAM / Flash / EEPROM) →

About the Toshiba Semiconductor RN29 Memory Series

The Toshiba Semiconductor RN29 Memory Series series groups 6 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common current - collector (Ic) of 100mA, FET type of 2 PNP - Pre-Biased (Dual) and frequency of 200MHz. Variants differ by case, current - collector cutoff and DC current gain (hFE) (Min) @ ic, vce, so you can match the exact case your application requires using the selection guide below.

Select a variant by

Case: 6-TSSOP, SC-88, SOT-363 · SOT-563, SOT-666
Current - collector cutoff: 100nA (ICBO) · 500nA
DC current gain (hFE) (Min) @ ic, vce: 30 @ 10mA, 5V · 80 @ 10mA, 5V
Power - max: 100mW · 200mW
Resistor - base (R1): 4.7kOhms · 22kOhms · 47kOhms
Resistor - emitter base (R2): 4.7kOhms · 47kOhms

Shared specifications

Current - collector (Ic): 100mA
FET type: 2 PNP - Pre-Biased (Dual)
Frequency: 200MHz
Mounting: Surface Mount
Package: Tape & Reel (TR); Cut Tape (CT)
Vce saturation (Max) @ ib, ic: 300mV @ 250µA, 5mA
Voltage - collector emitter breakdown: 50V

Variant comparison

Parameter	RN2904FE,LXHF(CT	RN2904FE,LF	RN2908FE(TE85L,F)	RN2961(TE85L,F)
Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	6-TSSOP, SC-88, SOT-363
Current - collector cutoff	500nA	500nA	100nA (ICBO)	100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce	80 @ 10mA, 5V	80 @ 10mA, 5V	80 @ 10mA, 5V	30 @ 10mA, 5V
Power - max	100mW	100mW	100mW	200mW
Resistor - base (R1)	47kOhms	47kOhms	22kOhms	4.7kOhms
Resistor - emitter base (R2)	47kOhms	47kOhms	47kOhms	4.7kOhms

Request a quote on any Toshiba Semiconductor RN29 Memory Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.