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Toshiba Semiconductor RN2902,LF(CT — Discrete Semiconductors

Toshiba RN2902,LF(CT 2 PNP Pre-Biased Dual Transistor, 50V

MPNRN2902,LF(CT
End of Life

Toshiba Semiconductor RN2902 series, 2 PNP - Pre-Biased (Dual) transistor, 50V Vce, 100mA Ic, 200mW, SOT-363 (US6) package, Tape & Reel (TR); Cut Tape (CT).

$0.29Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
Lead time3-5 Days wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN2902,LF(CT Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce50 @ 10mA, 5V
Power - max200mW
Frequency200MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Dual PNP pre-biased in a SOT-363 footprint

The RN2902,LF(CT is a dual PNP transistor with integrated bias resistors — each half contains a 10 kOhm base resistor (R1) and a 10 kOhm emitter-base resistor (R2). That means the base drive is set by the resistor divider, so the transistor turns on when the input voltage exceeds the Vbe threshold plus the drop across R2, and the collector current is limited by the 100 mA maximum rating. The 50 V collector-emitter breakdown gives headroom for 12 V and 24 V logic rails. The 200 mW power dissipation ceiling means the total heat from both transistors — including conduction and switching losses — must stay under that limit; at 100 mA collector current the Vce(sat) of 300 mV at 250 µA base drive gives a rough 30 mW per channel, leaving margin for both in a typical low-power switching or level-shifting application.

Active production, RoHS3 compliant

The dual pre-biased configuration reduces external component count — two transistors and four resistors in a single SOT-363 package — which simplifies PCB layout and procurement for high-volume builds.

Frequently asked questions

Where can I buy RN2902,LF(CT and how is it quoted for volume?

The RN2902,LF(CT is sourced through independent distribution.

What is the closest functional second-source for RN2902,LF(CT?

The RN2902FE,LF(CT is a peer with identical parametrics — same dual PNP pre-biased configuration, same 10 kOhm resistors, same 50 V Vce and 100 mA Ic ratings, same SOT-363 package. It is a drop-in replacement for the same footprint and BOM position.