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Toshiba Semiconductor RN2901FE(TE85L,F) — Discrete Semiconductors

Toshiba RN2901FE(TE85L,F) Dual PNP Pre-Biased, 100mA, ES6

MPNRN2901FE(TE85L,F)
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Toshiba Semiconductor RN2901FE(TE85L,F) dual PNP pre-biased transistor, 100 mA collector current, 50 V VCEO, 4.7 kΩ base and emitter resistors, SOT-563 / SOT-666 surface-mount package, ES6 supplier device package.

$0.36Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RN2901FE(TE85L,F) Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 10mA, 5V
Power - max100mW
Frequency200MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)4.7kOhms
Resistor - emitter base (R2)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Dual PNP pre-biased pair in a single SOT-563 package

The RN2901FE(TE85L,F) integrates two PNP transistors with matched 4.7 kΩ base and emitter bias resistors into a single SOT-563 package (ES6 supplier device code). This is a 2 PNP pre-biased (dual) configuration — each transistor has its own resistor network built in, so the external resistor pair per channel is eliminated from the BOM. The internal resistor values are identical at 4.7 kΩ for both R1 (base) and R2 (emitter-base), giving a consistent on/off threshold across both channels without trimming.

100 mA collector current with 50 V breakdown

Each PNP transistor is rated for 100 mA continuous collector current with a 50 V collector-emitter breakdown voltage. The 300 mV saturation voltage at 250 µA base current and 5 mA collector current means the transistor saturates hard enough to drive small relays, LED indicators, or logic-level loads without excessive power loss.

Frequently asked questions

Will RN2901FE(TE85L,F) drop into a board that was specified around RN2901,LXHF(CT without rewiring?

The RN2901FE(TE85L,F) and RN2901,LXHF(CT share the same dual PNP pre-biased transistor type, identical 4.7 kΩ base and emitter resistors, the same 300 mV saturation voltage at 250 µA / 5 mA, and the same SOT-563/ES6 package footprint. The RN2901,LXHF(CT is rated at 200 mW power dissipation versus 100 mW for the RN2901FE(TE85L,F), so the thermal budget is the main difference — confirm the board's power dissipation requirement before substituting.