SOT-353 dual PNP with integrated bias resistors
The RN2701,LF packs two PNP transistors with monolithic base (R1) and emitter-base (R2) resistors, each 4.7 kΩ, into a 5-pin SOT-353 (SC-70-5) package — the bias network is on-die, so the BOM loses two resistor placements and the associated pick-and-place cost. Surface-mount, tape-and-reel or cut-tape delivery. The USV supplier device package code is Toshiba's internal mark for the SOT-353 outline — the footprint matches the industry-standard SC-70-5 land pattern.
200 mW power ceiling and 50 V breakdown
Each transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a total package dissipation of 200 mW — the limiting factor in a dense board is the copper area under the SOT-353, not the silicon itself. Transition frequency is 200 MHz, so the part handles low-frequency switching and digital-level translation comfortably; the 300 mV Vce saturation at 250 µA base / 5 mA collector means the output drop stays under a logic-low threshold when driving a CMOS input. Minimum DC current gain is 30 at 10 mA collector current, 5 V Vce — the pre-biased resistors set the base current, so the actual gain in circuit is fixed by the resistor ratio, not external components.