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Toshiba Semiconductor RN2504(TE85L,F) — Discrete Semiconductors

Toshiba RN2504(TE85L,F) dual PNP pre-biased, 47k + 47k, SMV

MPNRN2504(TE85L,F)
End of Life

Toshiba Semiconductor RN2504(TE85L,F) dual PNP pre-biased transistor, 50V Vce, 100mA Ic, 300mW, 47kOhm + 47kOhm built-in resistors, SC-74A SOT-753 SMV package, Tape & Reel.

$0.47Ref. price · indicative, final on quote
PackagingSC-74A, SOT-753
StockIn Stock (18)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN2504(TE85L,F) Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max300mW
Frequency200MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74A, SOT-753
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Dual PNP pre-biased with matched resistor network

The Toshiba RN2504(TE85L,F) integrates two PNP transistors with a built-in bias resistor network — 47 kOhm base resistor (R1) and 47 kOhm base-emitter resistor (R2) per side — in a single SC-74A SOT-753 package. This eliminates two external resistors per transistor from the BOM, saving board space and reducing pick-and-place cost on high-volume assemblies. The 200 MHz transition frequency means it handles low-speed switching and digital interface loads comfortably, though it is not a fast-switching part for RF or high-frequency PWM.

Package and footprint — SMV / SOT-753

Housed in the SMV package (SC-74A, SOT-753), the RN2504(TE85L,F) occupies a 2.9 mm × 1.6 mm footprint with 0.95 mm pin pitch — a standard small-signal SOT-23-5 layout. Surface-mount assembly on standard FR-4 with no special thermal management needed for the 300 mW power dissipation.

Marked as Active by Toshiba Semiconductor with RoHS compliance.

Frequently asked questions

How does RN2504(TE85L,F) compare to RN2507(TE85L,F)?

Both are dual PNP pre-biased transistors in the same SMV package with identical 47 kOhm emitter-base resistors and the same 50 V / 100 mA / 300 mW ratings. The difference is the base resistor: RN2504 uses 47 kOhm (R1), while RN2507 uses 10 kOhm. The 10 kOhm version draws more base drive for a given input voltage, so the saturation voltage and input threshold shift — the two are not drop-in equivalents without checking the drive circuit.