Skip to main content
Toshiba Semiconductor RN2101MFV,L3XHF(CT — Discrete Semiconductors

RN2101MFV,L3XHF(CT Toshiba PNP Pre-Biased, 50V 100mA

MPNRN2101MFV,L3XHF(CT
End of Life

Toshiba Semiconductor Automotive series RN2101MFV,L3XHF(CT PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 150 mW power, SOT-723 VESM package, AEC-Q101 qualified.

$0.33Ref. price · indicative, final on quote
PackagingSOT-723
StockIn Stock (31)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN2101MFV,L3XHF(CT Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 10mA, 5V
Power - max150 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 5mA

Product details

AEC-Q101 pre-biased PNP for automotive signal switching

The RN2101MFV,L3XHF(CT is a PNP pre-biased transistor from Toshiba's Automotive series, qualified to AEC-Q101 — the automotive discrete semiconductor reliability standard covering temperature grade, ESD sensitivity, and PPAP-level traceability. This qualification places it in under-hood or cabin-domain circuits where the ambient temperature and vibration profile exceed commercial-grade limits. Integrated bias resistors R1 (base) and R2 (emitter-base) are both 4.7 kOhms, eliminating two external passives per channel. The 50 V collector-emitter breakdown and 100 mA continuous collector current suit it for driving low-current loads like relay coils, indicator LEDs, or logic-level interface stages in an automotive ECU.

SOT-723 VESM — 0.5 mm pitch, 1.2 × 1.2 mm body

Housed in the SOT-723 package with supplier device package designation VESM, the part measures approximately 1.2 × 1.2 mm with a 0.5 mm lead pitch. The small footprint demands a controlled solder-paste stencil aperture to avoid bridging between the base and emitter pads — a 0.4 mm stencil thickness and 1:1 pad-to-aperture ratio is a typical starting point for reflow profiles. The 150 mW power dissipation ceiling limits continuous collector current at elevated ambient temperatures. At 85 °C ambient, derating to roughly 60% of the 150 mW maximum is prudent unless the board has a dedicated thermal relief plane under the package.

Frequently asked questions

What is the difference between RN2101MFV,L3XHF(CT and RN2106MFV,L3XHF(CT?

Both are AEC-Q101 PNP pre-biased transistors in SOT-723 VESM with identical 4.7 kOhm base resistor (R1) and 50 V / 100 mA ratings. The RN2106MFV differs only in the emitter-base resistor (R2): 47 kOhms vs 4.7 kOhms on the RN2101. This changes the input threshold voltage and the off-state leakage characteristics — the RN2101 turns off more cleanly with a lower R2 value.

What package does RN2101MFV,L3XHF(CT use?

The part is supplied in SOT-723, designated VESM by Toshiba.