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Toshiba Semiconductor RN1904FE,LF(CT — Discrete Semiconductors
Toshiba Semiconductor

Toshiba RN1904FE,LF(CT Dual NPN Pre-Biased, 100mA, 50V, ES6

MPNRN1904FE,LF(CT
End of Life

Toshiba Semiconductor RN1904FE series dual NPN pre-biased transistor, 100 mA collector current, 50 V Vce, 100 mW max power, SOT-563 / SOT-666 package, ES6 supplier device package, Tape & Reel (TR) / Cut Tape (CT).

$0.24Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN1904FE,LF(CT Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max100mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Dual NPN pre-biased — what the 47k/47k resistor pair buys you

The RN1904FE,LF(CT: That means each transistor is self-biased — you drop the two external resistors per channel from the BOM, and the pair occupies a single SOT-563 footprint. The 250 MHz transition frequency keeps edges clean for level shifting, relay drivers, or small-signal switching up into the low-MHz range.

Package and board-fit — ES6 vs SOT-563

The 100 mW max power limits the continuous current per channel in free air; at 25 °C ambient, each transistor's 100 mA rating is achievable only with moderate duty cycle or adequate copper area on the collector pads. CT is for prototype or low-volume builds.

Frequently asked questions

How does RN1904FE,LF(CT differ from the RN1904,LF(CT?

Both share the same dual NPN pre-biased die with 47k/47k resistors, 100 mA Ic, and 50 V Vce. The RN1904FE uses the smaller ES6 (SOT-563) package rated at 100 mW max power, while the RN1904 comes in a larger package rated at 200 mW. If your board has the space and needs the extra thermal headroom, the RN1904 is the drop-in alternative; otherwise the FE variant saves PCB area.