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Toshiba Semiconductor RN1403,LF — Discrete Semiconductors

Toshiba RN1403,LF NPN Pre-Biased Transistor, 50V 100mA

MPNRN1403,LF
End of Life

Toshiba Semiconductor RN1403,LF NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 22 kOhms base and emitter-base resistors, 250 MHz transition frequency, SOT-23-3 S-Mini package, Tape & Reel.

$0.21Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockIn Stock (15)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN1403,LF Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V
Power - max200 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Bias resistor network sets the on/off threshold

The RN1403,LF integrates a 22 kOhm base resistor (R1) and a 22 kOhm emitter-base resistor (R2) — a 1:1 divider that defines the input voltage at which the transistor turns on. With both resistors equal, the switch-on threshold sits at roughly half the drive voltage, so a 5 V logic signal needs to exceed about 2.5 V at the base pin to saturate the output. This fixed ratio eliminates the external bias resistor pair, saving one component per channel on the board.

50 V breakdown and 100 mA continuous collector current

Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, this pre-biased NPN handles typical low-side switching of relay coils, indicator LEDs, or small solenoid valves in 24 V industrial logic circuits. The 200 mW power dissipation limit in the SOT-23-3 package means the actual continuous current at elevated ambient temperature is lower than the 100 mA headline — at 85 °C ambient the derating curve typically halves the allowable dissipation, so a 50 mA load is a safer continuous target without exceeding the junction temperature.

250 MHz transition frequency and saturation voltage

With a 250 MHz transition frequency, the RN1403,LF switches fast enough for PWM dimming of LEDs at tens of kilohertz or for driving the base of a larger power transistor in a Darlington pair. The minimum DC current gain of 70 at 10 mA collector current ensures the base drive from a microcontroller GPIO (typically 2-5 mA) saturates the output reliably.

Frequently asked questions

How does the RN1403,LF compare to the RN1408,LF?

Both share the same 50 V breakdown, 100 mA collector current, 250 MHz transition frequency, and 22 kOhm base resistor. The difference is the emitter-base resistor: the RN1403,LF uses 22 kOhms (1:1 ratio), while the RN1408,LF uses 47 kOhms (roughly 1:2 ratio). This shifts the turn-on threshold — the RN1403,LF switches at a lower input voltage than the RN1408,LF for the same drive signal.

What package does the RN1403,LF use?

The RN1403,LF is supplied in a TO-236-3 / SC-59 / SOT-23-3 surface-mount package, designated as S-Mini by Toshiba.