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Toshiba Semiconductor RN1104,LF(CT — Discrete Semiconductors
Toshiba Semiconductor

Toshiba RN1104,LF(CT NPN Pre-Biased Transistor, 50V, 100mA

MPNRN1104,LF(CT
End of Life

Toshiba Semiconductor RN1104 series NPN pre-biased transistor, SC-75 SOT-416 package, 50 V VCEO, 100 mA Ic, 47 kOhm base and emitter resistors, SSM supplier device package.

$0.2Ref. price · indicative, final on quote
RN1104,LF(CT datasheet
PackagingSC-75, SOT-416
StockIn Stock (21)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RN1104,LF(CT Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max100 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Pre-biased NPN in a 100 mW SC-75 footprint

The RN1104,LF(CT: The built-in bias network eliminates two external resistors from the BOM, shrinking the placement footprint for high-density boards where every mm² counts.

Switching envelope: 50 V breakdown, 100 mA collector current

Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, this transistor handles low-side switching of small relays, LEDs, and logic-level loads in 5 V to 24 V rails. The 100 mW power dissipation ceiling means the junction temperature rise limits duty cycle in ambient above 85 °C — the 300 mV saturation voltage at 250 µA base drive and 5 mA collector current keeps conduction losses low for lightly loaded outputs.

Frequently asked questions

What is the closest functional alternative to RN1104,LF(CT?

The RN1104MFV,L3F is a pin-compatible variant with the same 47 kOhm base and emitter resistors and the same 50 V / 100 mA ratings, but it is rated for 150 mW power dissipation versus the RN1104's 100 mW. The higher power ceiling gives the MFV variant more thermal headroom in the same SC-75 footprint. Both share the same bias resistor values and basic switching characteristics.

What package does RN1104,LF(CT come in?

The RN1104,LF(CT is supplied in an SC-75 / SOT-416 surface-mount package (Toshiba designation SSM).