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HN1B04FE-Y~6LXHF

Toshiba HN1B04FE-Y,LXHF AEC-Q101 NPN+PNP Transistor

MPNHN1B04FE-Y,LXHF
End of Life

Toshiba Automotive AEC-Q101 HN1B04FE-Y,LXHF complementary NPN/PNP transistor pair, 50V VCEO, 150mA Ic, 80MHz fT, SOT-563/SOT-666 surface mount, 100mW max power.

$0.46Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
SeriesAutomotive, AEC-Q101
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

HN1B04FE-Y,LXHF specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 2mA, 6V
Power - max100mW
Frequency80MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA

Product details

AEC-Q101 qualified complementary pair for automotive loads

The Toshiba HN1B04FE-Y,LXHF is an automotive-grade complementary transistor pair integrating one NPN and one PNP device in a single SOT-563 or SOT-666 surface-mount package. This is the distinction between 'automotive-capable' and 'automotive-qualified'; the OEM auditor will ask for the AEC-Q101 report, and this part has one.

50V VCEO, 150mA Ic — sizing for 12V/24V bus loads

Collector-emitter breakdown is rated at 50V minimum, giving 2:1 derating margin on a 12V automotive rail and comfortable headroom on 24V truck systems. The 150mA maximum collector current per transistor covers solenoid pre-drive, relay coil drive, and logic-level signal switching. Vce(sat) is specified at 250mV (NPN) and 300mV (PNP) at 10mA base / 100mA collector — a tight saturation voltage that keeps conduction losses low in the pre-drive stage.

80MHz transition frequency — fast enough for PWM pre-drive

With an 80MHz fT, this pair handles PWM frequencies well above the audio band and into the hundreds of kilohertz. For a 20kHz automotive PWM pre-drive stage, the gain-bandwidth is more than sufficient; the part will not introduce phase lag or switching loss at those frequencies.

SOT-563/SOT-666 — two footprints, one BOM position

The package listing covers both SOT-563 and SOT-666 case outlines. These are near-identical footprints (the SOT-666 has a slightly wider body), but both share the same 6-pin ES6 supplier device package code. A PCB laid out for the SOT-563 land pattern will accept either variant, which gives the BOM some sourcing flexibility. The surface-mount assembly is standard reflow; no special profile needed.

100nA cutoff — leakage floor matters in battery-connected designs

The collector cut-off current is a maximum of 100nA (ICBO). In an automotive ECU that stays powered during key-off, that leakage is negligible against the module's sleep budget. The 100mW maximum power dissipation per package limits continuous current in still air; for a pre-drive stage switching at low duty cycle, the thermal margin is adequate.

Frequently asked questions

What are the exact specifications of HN1B04FE-Y LXHF?

The HN1B04FE-Y,LXHF is a complementary NPN/PNP transistor pair rated at 50V VCEO, 150mA maximum collector current, 80MHz transition frequency, and 100mW maximum power dissipation. Vce(sat) is 250mV (NPN) and 300mV (PNP) at 10mA base / 100mA collector. Operating junction temperature is rated to 150°C.

Is HN1B04FE-Y LXHF lead-free and RoHS compliant?

The part is sourced as RoHS-compliant. The suffix code indicates a lead-free finish suitable for lead-free reflow profiles. No separate RoHS certificate is required for standard procurement; the manufacturer's declaration is available on request.