HN1B04FE-GR,LF
Toshiba Semiconductor
Tape & Reel (TR); Cut Tape (CT)Surface MountNPN, PNP
Ref. price$0.31
Lead time on requestGet quote
Toshiba Semiconductor HN1B04FE Series
3 variants · Toshiba Semiconductor
About the Toshiba Semiconductor HN1B04FE Series
The Toshiba Semiconductor HN1B04FE Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of SOT-563, SOT-666, current - collector (Ic) of 150mA and current - collector cutoff of 100nA (ICBO). Variants differ by DC current gain (hFE) (Min) @ ic, vce and vce saturation (Max) @ ib, ic, so you can match the exact DC current gain (hFE) (Min) @ ic, vce your application requires using the selection guide below. All listed Toshiba Semiconductor HN1B04FE Series part numbers are active and orderable.
Select a variant by
- DC current gain (hFE) (Min) @ ic, vce
- 120 @ 2mA, 6V · 200 @ 2mA, 6V
- Vce saturation (Max) @ ib, ic
- 250mV @ 10mA, 100mA · 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
Shared specifications
- Case
- SOT-563, SOT-666
- Current - collector (Ic)
- 150mA
- Current - collector cutoff
- 100nA (ICBO)
- FET type
- NPN, PNP
- Frequency
- 80MHz
- Mounting
- Surface Mount
- Operating temperature
- 150°C (TJ)
- Package
- Tape & Reel (TR); Cut Tape (CT)
- Power - max
- 100mW
- Voltage - collector emitter breakdown
- 50V
Variant comparison
| Parameter | HN1B04FE-GR,LF | HN1B04FE-Y,LXHF | HN1B04FE-GR,LXHF |
|---|---|---|---|
| DC current gain (hFE) (Min) @ ic, vce | 200 @ 2mA, 6V | 120 @ 2mA, 6V | 200 @ 2mA, 6V |
| Vce saturation (Max) @ ib, ic | 250mV @ 10mA, 100mA | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA |
Request a quote on any Toshiba Semiconductor HN1B04FE Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.