Automotive-grade complementary transistor pair
It combines a 50V collector-emitter breakdown voltage with a 150mA continuous collector current rating and a minimum DC current gain of 200 at 2mA, 6V. The 80MHz transition frequency supports switching and amplification in automotive modules such as ECU signal conditioning, relay drivers, and sensor interfaces.
Package and footprint — SOT-563 / SOT-666 with ES6 marking
The part is offered in both SOT-563 and SOT-666 case styles, with the supplier device package designated ES6. Both are small 6-pin surface-mount packages suited for compact PCB layouts in automotive ECUs. The dual-transistor configuration saves board area compared to two discrete SOT-23 devices.
150°C junction temperature — under-hood capable
Rated for a maximum junction temperature of 150°C, the HN1B04FE-GR,LXHF is suitable for high-temperature automotive environments such as engine compartments, transmission control units, and under-hood sensor modules. The 100mW power dissipation limit should be derated according to the thermal resistance for the SOT-563/SOT-666 package in the target airflow conditions.
Switching performance — 80MHz fT and saturation voltages
With an 80MHz transition frequency, this transistor pair can handle moderate-speed switching in DC-DC converters, gate drive buffers, and logic-level translation. The Vce saturation is specified at 250mV max for the NPN and 300mV max for the PNP at 10mA base current and 100mA collector current, keeping conduction losses low in saturated switching applications. The 100nA maximum collector cutoff current ensures minimal leakage at high temperature.