Complementary NPN/PNP pair in one SOT-563
The Toshiba HN1B04FE-GR,LF integrates one NPN and one PNP transistor in a single SOT-563 package (supplier device package ES6), saving board area in push-pull drivers, signal-level shifters, and general-purpose switching where a complementary pair is needed. The NPN and PNP halves share the same 50V collector-emitter breakdown and 150mA maximum collector current, so you can match them in a half-bridge or inverter stage without juggling two different part numbers.
Ratings that matter for the BOM
The 50V VCEO (collector-emitter breakdown) gives you headroom on 24V and 36V industrial rails, and the 150mA Ic covers relay-coil drive, LED matrix columns, and small-signal pre-driver stages. Minimum DC current gain (hFE) of 200 at 2mA, 6V means the base drive requirement stays low — useful when driven directly from a 3.3V or 5V logic output through a series resistor. The 80MHz transition frequency (fT) supports switching up to a few MHz, enough for PWM fan control, DC-DC converter gate drive, or serial bus level translation. Vce saturation is specified at 250mV max at 10mA base, 100mA collector — a clean on-state drop that keeps dissipation low in the 50–100mA range. Collector cutoff current is 100nA max (ICBO), so leakage won't pull down a high-impedance node at room temperature.
The 100mW max power dissipation limits continuous operation to low-current or pulsed duty — the 150mA Ic rating is for switching, not steady-state conduction at full current. For a 100mA continuous load, derate the power budget against the 100mW ceiling and the 150°C junction temperature limit.