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Toshiba Semiconductor 2SA2195,LF — Discrete Semiconductors

2SA2195,LF Toshiba PNP Transistor, 50V 1.7A UFM

MPN2SA2195,LF
End of Life

Toshiba Semiconductor 2SA2195,LF PNP transistor, 50 V Vceo, 1.7 A Ic, 500 mW, UFM 3-SMD flat-lead package, Tape & Reel / Cut Tape.

$0.52Ref. price · indicative, final on quote
Packaging3-SMD, Flat Leads
StockIn Stock (27)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2SA2195,LF Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP
Voltage - collector emitter breakdown50 V
Current - collector (Ic)1.7 A
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 300mA, 2V
Power - max500 mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case3-SMD, Flat Leads
Vce saturation (Max) @ ib, ic200mV @ 33mA, 1A

Product details

PNP 50 V, 1.7 A — UFM flat-lead package

The 2SA2195,LF is a PNP bipolar transistor from Toshiba Semiconductor, rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 1.7 A. It dissipates up to 500 mW, which is the thermal budget for this UFM package — a 3-lead SMD with flat leads that sit flush on the PCB, keeping the profile low. The DC current gain is a minimum of 200 at 300 mA collector current and 2 V Vce, so the part stays in its linear region well into the ampere range. Vce saturation is 200 mV maximum at 33 mA base current and 1 A collector current — the on-state voltage drop is low enough that conduction losses stay under 340 mW at full rated current.

The junction temperature rating is 150°C, which covers most ambient operating conditions up to 85°C with derating. The collector cutoff current is 100 nA maximum, so leakage is negligible in switched or low-power idle circuits.

The flat-lead profile means the component sits close to the board — useful for slim-profile assemblies or where the backside of the PCB has components that limit clearance. It is available in Tape & Reel (TR) for automated pick-and-place or Cut Tape (CT) for prototyping and low-volume builds. The mounting type is surface mount, so no manual through-hole soldering step is needed in production.

Frequently asked questions

How can I order 2SA2195,LF or check availability?

The 2SA2195,LF is sourced to order against an RFQ. Submit an RFQ for the quantity and delivery timeline you need.

What is the closest functional second-source for 2SA2195,LF?

The closest peer is the 2SA2060(TE12L,F), also a PNP transistor rated at 50 V and 2 A with a 1 W power dissipation in a similar surface-mount package. The 2SA2195,LF has a lower 500 mW power rating and a different package (UFM vs the 2SA2060's package), so a board spin may be needed to swap them. The 2SA2056(TE85L,F) is another PNP option at 50 V and 2 A with 625 mW dissipation.

What compliance documentation does Toshiba provide for 2SA2195,LF?

The part is ROHS3 compliant. Toshiba provides a RoHS certificate of compliance and a material declaration. No UL or IEC certification is listed on this discrete transistor.