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Toshiba Semiconductor 2SA1162-GR,LF — Discrete Semiconductors

Toshiba 2SA1162-GR,LF PNP Transistor, 150 mA, 50 V, S-Mini

MPN2SA1162-GR,LF
End of Life

Toshiba Semiconductor 2SA1162-GR,LF PNP transistor, 150 mA collector current, 50 V Vce breakdown, 150 mW power dissipation, SOT-23-3 S-Mini package, Tape & Reel.

$0.17Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockIn Stock (28)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2SA1162-GR,LF Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP
Voltage - collector emitter breakdown50 V
Current - collector (Ic)150 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 6V
Power - max150 mW
Frequency80MHz
Operating temperature125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic300mV @ 10mA, 100mA

Product details

Small-signal PNP for general-purpose switching and amplification

The Toshiba 2SA1162-GR,LF is a general-purpose PNP transistor in the compact S-Mini (SOT-23-3) surface-mount package. It handles up to 150 mA of continuous collector current with a 50 V collector-emitter breakdown, making it a fit for low-power switching and analog amplification in densely populated boards.

Key ratings and what they mean for the BOM

With a maximum power dissipation of 150 mW, this transistor comfortably drives loads like small relays, LEDs, or logic-level interface circuits without exceeding the thermal budget of the SOT-23-3 footprint. The DC current gain (hFE) is specified at a minimum of 200 at 2 mA collector current and 6 V Vce — the GR grade ensures a tighter gain spread, so the bias network stays predictable across the reel. The Vce saturation voltage is only 300 mV maximum at 10 mA base current and 100 mA collector current, which keeps conduction losses low when the transistor is fully on. An 80 MHz transition frequency means it can handle audio-frequency amplification and moderate-speed switching up into the low-MHz range without significant gain roll-off.

Package and board fit

Housed in the industry-standard SOT-23-3 (SC-59) footprint, the S-Mini package is a drop-in for most small-signal transistor pads. The surface-mount profile suits automated pick-and-place and reflow assembly.

Lifecycle and compliance

It is fully ROHS3 compliant, meeting the current EU restriction requirements for lead and other hazardous substances.

Frequently asked questions

How does 2SA1162-GR,LF compare to the 2SA1162-Y,LF variant?

Both share the same 150 mW power, 150 mA collector current, 50 V breakdown, and S-Mini package. The difference is the hFE grade: the GR suffix guarantees a minimum gain of 200 at 2 mA, while the Y suffix guarantees a minimum of 120. The GR grade is the tighter-spec option for designs that need a narrower gain spread.