Skip to main content
UCC27712QDRQ1

UCC27712QDRQ1 Half-Bridge Gate Driver, 600V, AEC-Q100

MPNUCC27712QDRQ1
Active

Texas Instruments UCC27712QDRQ1, Automotive AEC-Q100 half-bridge gate driver, 600V bootstrap, 1.8A source / 2.8A sink peak, 10V~20V supply, -40°C~125°C, 8-SOIC package.

$2.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27712QDRQ1 specifications
ParameterValue
SeriesAutomotive, AEC-Q100
Gate typeIGBT, N-Channel, P-Channel MOSFET
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH1.5V, 1.6V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)1.8A, 2.8A
Operating temperature-40°C~125°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)16ns, 10ns

Product details

Half-bridge gate driver for automotive power stages

The Texas Instruments UCC27712QDRQ1 is an automotive-grade half-bridge gate driver qualified to AEC-Q100, designed to drive both N-channel MOSFETs and IGBTs in independent-channel configurations. It integrates a bootstrap diode rated for 600 V high-side voltage, making it suitable for motor drives, DC-DC converters, and inverter stages in under-hood and chassis-domain automotive systems.

10V to 20V supply — matches standard automotive rails

The supply voltage range spans 10 V to 20 V, covering the nominal 12 V battery bus and the boosted 15 V to 18 V rails often used for IGBT gate drive in traction inverters. The 1.8 A source and 2.8 A sink peak output current deliver the gate charge needed for fast switching transitions without excessive drive losses. Rise and fall times are 16 ns and 10 ns typical, respectively, which keeps cross-conduction dead-time manageable in hard-switched topologies.

Frequently asked questions

Is UCC27712QDRQ1 automotive qualified?

Yes, it is AEC-Q100 qualified, making it suitable for automotive applications including under-hood and chassis-domain electronics.

Can UCC27712QDRQ1 drive both MOSFETs and IGBTs?

Yes, it drives N-channel MOSFETs and IGBTs in a half-bridge configuration, with independent channels for high-side and low-side control.