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UCC27614DR

UCC27614DR Low-Side Gate Driver, 10A Peak, 8-SOIC

MPNUCC27614DR
Active

Texas Instruments UCC27614DR single low-side gate driver, 10A peak source/sink, 4.5V–26V supply, 4.5ns rise / 4ns fall, -40°C–150°C junction, 8-SOIC package.

$2.5300Ref. price · indicative, final on quote
Texas Instruments UCC27614DR datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27614DR specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeInverting, Non-Inverting
Channel typeSingle
MountingSurface Mount
Supply voltage4.5V ~ 26V
Current - peak output (Source, sink)10A, 10A
Operating temperature-40°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers1
Driven configurationLow-Side
Rise (Fall time)4.5ns, 4ns

Product details

Single-channel 10A low-side driver for N-channel MOSFETs

The driver accepts both inverting and non-inverting input signals.

4.5 ns rise time — switching loss and ringing tradeoff

The fast edges excite parasitic inductance in the gate loop — the PCB layout engineer needs a tight, low-inductance path between the driver output and the MOSFET gate.

Active lifecycle — no imminent LTB

For the storeroom, this means the part is a safe line item to stock — no need to squirrel away a last-time-buy quantity.

Frequently asked questions

Can UCC27614DR drive IGBTs?

The UCC27614DR is specified for N-channel MOSFETs with a low-side driven configuration. It can drive IGBTs that present a similar gate charge profile, provided the supply voltage (4.5 V to 26 V) and peak current (10 A) meet the IGBT gate drive requirements. The fast 4.5 ns rise time may need a series gate resistor to limit di/dt and prevent overshoot on the IGBT gate.