Dual 5A low-side driver for IGBT and MOSFET gates
It drives N-channel MOSFETs and IGBTs from a 4.5V to 18V supply rail.
The 5A peak source/sink capability allows the UCC27528D to charge and discharge the gate capacitance of a large MOSFET or IGBT quickly, reducing the Miller plateau duration and minimising switching losses. For a typical 10 nC total gate charge, the driver can deliver the charge in under 5 ns at the peak current, though the actual edge rate is also limited by the external gate resistor and layout inductance. The 7ns rise and 6ns fall times (typical, 1 nF load) mean the driver can support switching frequencies well into the hundreds of kilohertz without excessive cross-conduction losses, provided the power loop inductance is kept low.
The 4.5V to 18V supply range covers the common gate-drive bias voltages for logic-level MOSFETs (5V), standard MOSFETs (10V–12V), and IGBTs (15V). The lower end allows direct operation from a 5V rail without a separate bias converter, simplifying the auxiliary supply design. The -40°C to 140°C junction temperature rating is wider than the typical industrial -40°C to 125°C, providing margin for self-heating in high-frequency or high-load applications. The 140°C TJ(max) also aligns with the requirements of many motor-drive and power-converter designs where the driver sits near the power stage.
The independent channel architecture means each output can drive a separate power device, or the two channels can be paralleled for higher peak current into a single gate.