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UCC27525DSDT

UCC27525DSDT Gate Driver, 5A Peak, Low-Side, 8SON

MPNUCC27525DSDT
Active

Texas Instruments UCC27525DSDT, low-side gate driver, 5A peak source/sink, 7ns/6ns rise/fall, 4.5V-18V supply, -40°C to 140°C, 8-WDFN exposed pad / 8-SON (3x3).

$2.6700Ref. price · indicative, final on quote
Texas Instruments UCC27525DSDT datasheet (PDF)
Packaging8-WDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

UCC27525DSDT specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeInverting, Non-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH1V, 2.3V
Current - peak output (Source, sink)5A, 5A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-WDFN Exposed Pad
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7ns, 6ns

Product details

Low-side gate driver with 5 A peak drive for IGBTs and MOSFETs

The Texas Instruments UCC27525DSDT is a dual-channel, low-side gate driver for IGBTs and N-channel MOSFETs. Each channel delivers 5 A peak source and 5 A peak sink current, with a typical rise time of 7 ns and fall time of 6 ns.

140°C junction rating — holds up in hot power stages

The 5 A peak capability holds across the temperature span.

Mounting and layout — 8-SON with exposed pad

The supplier device package is 8-SON measuring 3 mm × 3 mm.

Frequently asked questions

Is UCC27525DSDT compatible with 5V logic?

Yes. The logic-low threshold is 1 V and logic-high is 2.3 V, so a 5 V controller output drives it directly. The 4.5 V minimum supply also means the driver can run from the same 5 V rail.

What is the equivalent of UCC27525DSDT?

A functional peer is the LM5106MM/NOPB, also a dual low-side driver, but it is a half-bridge configuration with 1.2 A peak current and slower 15 ns/10 ns rise/fall times. The UCC27525DSDT offers higher drive current (5 A) and faster edges, making it a better fit for large IGBTs and high-frequency switching.