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UCC27525DSDR

UCC27525DSDR Low-Side Gate Driver, 5A Peak, 8-SON

MPNUCC27525DSDR
Active

Texas Instruments UCC27525DSDR dual low-side gate driver, 5A peak source/sink, 4.5V-18V supply, 7ns rise/6ns fall, 8-WDFN exposed pad, -40°C~140°C.

$0.7650Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27525DSDR specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeInverting, Non-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH1V, 2.3V
Current - peak output (Source, sink)5A, 5A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-WDFN Exposed Pad
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7ns, 6ns

Product details

Dual 5A low-side driver for IGBT and MOSFET gates

Each channel operates independently with both inverting and non-inverting inputs, giving the designer flexibility to configure the logic polarity per channel without external inverters. The 7ns typical rise time and 6ns typical fall time keep switching losses low in moderate-frequency converters, though the fast edges demand a tight layout—short gate-loop inductance is critical to avoid overshoot on the driven FET gate.

140°C junction rating and 8-SON package

Surface-mount assembly with the exposed pad means the solder paste stencil aperture for the pad should be segmented to avoid voiding—a single large opening traps flux gases and lifts the die temperature.

Frequently asked questions

Does UCC27525DSDR have inverting and non-inverting inputs?

Yes, each independent channel provides both inverting and non-inverting input pins, allowing the designer to set the logic polarity per channel without external inverters.