Dual 5 A low-side driver for IGBT and MOSFET gates
The supply voltage range of 4.5 V to 18 V covers common gate drive rails — 5 V for logic-level MOSFETs and 12 V for standard IGBTs — without needing an intermediate regulator.
Texas Instruments UCC27524DSDT, dual low-side gate driver for IGBT and N-Channel MOSFET, 5A peak source/sink, 7ns rise / 6ns fall typ, 4.5V to 18V supply, -40°C to 140°C junction, 8-WDFN exposed pad package.
| Parameter | Value |
|---|---|
| Gate type | IGBT, N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 18V |
| Logic voltage - VIL, VIH | 1V, 2.3V |
| Current - peak output (Source, sink) | 5A, 5A |
| Operating temperature | -40°C~140°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 8-WDFN Exposed Pad |
| Number of drivers | 2 |
| Driven configuration | Low-Side |
| Rise (Fall time) | 7ns, 6ns |
The supply voltage range of 4.5 V to 18 V covers common gate drive rails — 5 V for logic-level MOSFETs and 12 V for standard IGBTs — without needing an intermediate regulator.
The UCC27524 base number covers the family; the DSDT suffix specifies the 8-WDFN exposed pad package (8-SON 3x3 mm) and the tape-and-reel / cut-tape shipping format. The electrical specifications — 5 A peak drive, 7 ns rise / 6 ns fall, 4.5 V to 18 V supply — are identical across the family.
The UCC27524DSDT is specified to drive IGBT and N-Channel MOSFET gates in a low-side configuration.