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UCC27524DSDT

UCC27524DSDT Dual Low-Side Gate Driver, 5A Peak, 8-SON

MPNUCC27524DSDT
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Texas Instruments UCC27524DSDT, dual low-side gate driver for IGBT and N-Channel MOSFET, 5A peak source/sink, 7ns rise / 6ns fall typ, 4.5V to 18V supply, -40°C to 140°C junction, 8-WDFN exposed pad package.

$2.6700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27524DSDT specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH1V, 2.3V
Current - peak output (Source, sink)5A, 5A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-WDFN Exposed Pad
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7ns, 6ns

Product details

Dual 5 A low-side driver for IGBT and MOSFET gates

The supply voltage range of 4.5 V to 18 V covers common gate drive rails — 5 V for logic-level MOSFETs and 12 V for standard IGBTs — without needing an intermediate regulator.

140°C junction — thermal headroom for tight enclosures

Frequently asked questions

What is the difference between UCC27524 and UCC27524DSDT?

The UCC27524 base number covers the family; the DSDT suffix specifies the 8-WDFN exposed pad package (8-SON 3x3 mm) and the tape-and-reel / cut-tape shipping format. The electrical specifications — 5 A peak drive, 7 ns rise / 6 ns fall, 4.5 V to 18 V supply — are identical across the family.

What gate types does the UCC27524DSDT drive?

The UCC27524DSDT is specified to drive IGBT and N-Channel MOSFET gates in a low-side configuration.