UCC27524DSDT

Texas Instruments

Texas Instruments UCC27524DSDT, dual low-side gate driver for IGBT and N-Channel MOSFET, 5A peak source/sink, 7ns rise / 6ns fall typ, 4.5V to 18V supply, -40°C to 140°C junction, 8-WDFN exposed pad package.

UCC27524DSDT
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[IN STOCK] In Stock: 23 pcs
$1.37/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UCC27524DSDT specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 18V
Logic voltage - VIL, VIH1V, 2.3V
Current - peak output (Source, sink)5A, 5A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-WDFN Exposed Pad
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)7ns, 6ns

Technical details

Dual 5 A low-side driver for IGBT and MOSFET gates

The supply voltage range of 4.5 V to 18 V covers common gate drive rails — 5 V for logic-level MOSFETs and 12 V for standard IGBTs — without needing an intermediate regulator.

140°C junction — thermal headroom for tight enclosures

UCC27524DSDT
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