Dual 4A low-side driver for N- and P-channel gates
It drives both N-channel and P-channel MOSFETs, making it a flexible choice for synchronous rectifier stages, half-bridge gate drive, and general-purpose power switching up to 15V supply rails.
4A peak drive — sizing for the gate charge load
Each channel's 4A peak source and sink capability determines the maximum total gate charge it can switch at a given frequency. For a MOSFET with 60 nC total gate charge, the driver can theoretically charge the gate in about 15 ns, but the practical switching frequency is limited by the driver's thermal dissipation and the gate drive loop inductance. The 20 ns typical rise and 15 ns typical fall times confirm fast edge rates that keep crossover conduction losses low in hard-switched topologies.
The 4.5V to 15V supply range covers common bias rails — 5V for logic-level MOSFETs and 12V for standard-threshold power MOSFETs. The logic input thresholds of 1V (VIL) and 2V (VIH) are compatible with 3.3V and 5V logic families from MCUs, FPGAs, or PWM controllers without external level shifting.
The wide range also provides thermal margin in dense power stages where the driver sits near hot MOSFETs and magnetics.
8-SOIC package — layout considerations
Keep the gate drive loop short — place the driver within 10 mm of the MOSFET gate to minimise parasitic inductance that would otherwise slow the edge and cause ringing.