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Texas Instruments UCC27322DGN — Power Management (PMIC / Gate Driver)

UCC27322DGN – TI Low-Side MOSFET Driver, 9A Peak, 20ns

MPNUCC27322DGN
Active

Texas Instruments UCC27322DGN, single low-side MOSFET driver, 9A peak output source/sink, 20ns rise/fall, 4V-15V supply, non-inverting, 8-HVSSOP package, -40°C to 105°C.

$1.6500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27322DGN specifications
ParameterValue
Gate typeN-Channel, P-Channel MOSFET
Input typeNon-Inverting
Channel typeSingle
MountingSurface Mount
Supply voltage4V ~ 15V
Logic voltage - VIL, VIH1.1V, 2.7V
Current - peak output (Source, sink)9A, 9A
Operating temperature-40°C~105°C(TA)
PackageTube
Case8-TSSOP, 8-MSOP (0.118\", 3.00mm Width) Exposed Pad
Number of drivers1
Driven configurationLow-Side
Rise (Fall time)20ns, 20ns

Product details

That combination means it can charge a 10 nC gate capacitance in roughly 2.2 ns at the Miller plateau, which keeps the switching transition short and the crossover conduction loss low in hard-switched topologies.

Package and thermal: the exposed pad is part of the circuit

The single driver channel occupies one output pin; the adjacent pins carry the supply and ground returns. The layout should keep the gate-drive loop (driver output → gate resistor → MOSFET gate → source → ground return) under 1 cm to minimise parasitic inductance that would otherwise slow the edge or cause ringing.

Frequently asked questions

Is the UCC27322DGN obsolete?

No — the product status is active.

What is the closest pin-compatible alternative to the UCC27322DGN?

The UCC27322 family includes the UCC27322DGN (non-inverting, 8-HVSSOP) and the UCC27321DGN (inverting, same package). Both share the same pinout and drive capability, so swapping the inverting vs non-inverting logic is a board-level decision, not a footprint change.

What gate types does the UCC27322DGN drive?

It drives both N-channel and P-channel MOSFETs in a low-side configuration. The single output can source or sink 9 A peak, which covers most power MOSFETs up to about 100 nC total gate charge at moderate switching frequencies.