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Texas Instruments UCC27282DRCT — Power Management (PMIC / Gate Driver)

UCC27282DRCT 120V Half-Bridge MOSFET Driver, 2.5A/3.5A Peak

MPNUCC27282DRCT
Active

Texas Instruments UCC27282DRCT, half-bridge gate driver, N-channel MOSFET, 5.5V~16V supply, 2.5A source/3.5A sink peak output, 12ns rise/10ns fall, 120V bootstrap max, -40°C~125°C, 10-VSON (3x3) package, Surface Mount.

$2.6100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27282DRCT specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage5.5V ~ 16V
Logic voltage - VIL, VIH0.9V, 2.4V
High side voltage - max (Bootstrap)120 V
Current - peak output (Source, sink)2.5A, 3.5A
Operating temperature-40°C~125°C
PackageTape & Reel (TR); Cut Tape (CT)
Case10-VFDFN Exposed Pad
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)12ns, 10ns

Product details

2.5 A / 3.5 A peak output — what it buys the half-bridge

Its 2.5 A source and 3.5 A sink peak output current charge and discharge the gate capacitance quickly, which directly reduces switching losses and keeps the dead-time window tight in a motor-drive or DC-DC converter leg.

12 ns rise, 10 ns fall — edge-rate and layout budget

The 10-VSON package with exposed pad helps by providing a low-inductance return path through the thermal pad — a four-layer board with the pad stitched to a solid ground plane is the standard layout for this driver.

120 V bootstrap — application ceiling

The high-side bootstrap pin is rated to 120 V, which sets the maximum DC bus voltage for the half-bridge. This covers 48 V telecom bricks, 72 V e-bike controllers, and 100 V industrial inverter rails with margin. The supply range of 5.5 V to 16 V lets the driver run from a standard 12 V bias rail while the bootstrap diode handles the high-side floating supply.

Frequently asked questions

Can UCC27282DRCT drive N-channel MOSFETs only?

Yes, the gate type is specified for N-channel MOSFETs. The half-bridge configuration drives a high-side and a low-side N-channel FET, with the high-side supply derived from a bootstrap circuit.