4 A peak drive with 17 ns edges — the gate-loop budget
The UCC27222PWP from Texas Instruments is a half-bridge N-channel MOSFET driver rated for 4 A peak source and 4 A peak sink current, with a typical rise and fall time of 17 ns driving a 1 nF load. This combination means the driver can charge a typical power MOSFET gate (say 10–20 nC total gate charge) in under 50 ns, which sets the minimum dead-time the controller must respect to avoid shoot-through. The 3.7 V to 20 V supply range lets it run from a 5 V bias for low-voltage rails or a 12 V rail for standard industrial MOSFETs.
-55°C to 115°C — military temperature grade
The 115°C ceiling also provides headroom in a 85°C ambient with the self-heating from 4 A gate-drive pulses.
14-HTSSOP exposed pad — thermal and layout checklist
The 0.65 mm pin pitch is manageable on a two-layer board, but the high di/dt in the gate loop (4 A in 17 ns) demands a tight loop from the driver output to the MOSFET gate and back through the source return; a 4-layer stack with a dedicated ground plane directly under the driver is the safer choice for switching frequencies above 500 kHz.